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 Power Transistors
2SC3975
Silicon NPN triple diffusion planar type
Unit: mm
For high breakdown voltage high-speed switching
(0.7)
15.00.3 11.00.2
5.00.2 (3.2)
I Features
* High-speed switching * High collector to base voltage VCBO * Wide area of safe operation (ASO) * Satisfactory linearity of forward current transfer ratio hFE * Full-pack package which can be installed to the heat sink with one screw
21.00.5 15.00.2
3.20.1
16.20.5 (3.5) Solder Dip
2.00.2 1.10.1
2.00.1 0.60.2
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25C Ta = 25C Tj Tstg VEBO ICP IC IB PC Rating 800 800 500 8 20 10 5 100 3 150 -55 to +150 C C Unit V V V V A A A W
1
5.450.3 10.90.5 2 3
1 : Base 2 : Collector 3 : Emitter EIAJ : SC-96 TOP-3F-A Package
Junction temperature Storage temperature
I Electrical Characteristics TC = 25C
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Symbol ICBO IEBO VCEO hFE1 hEF2 Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 6 A IC = 6 A, IB = 1.2 A IC = 6 A, IB = 1.2 A VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 6 A, IB1 = 1.2 A, IB2 = -2.4 A, VCC = 200 V 20 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz s s s Min Typ Max 100 100 Unit A A V
1
2SC3975
PC T a
120 12 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) TC=25C 10
Power Transistors
IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 TC=100C 3 1 0.3 0.1 0.03 0.01 0.1 25C -25C
VCE(sat) IC
Collector power dissipation PC (W)
100 (1) 80
Collector current IC (A)
IB=100mA 8 50mA 40mA 6 30mA 20mA 4 10mA 2 5mA
60
40
20
(2) (3)
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0.3
1
3
10
30
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
100
hFE IC
IC/IB=5 1000 VCE=5V 100
fT I C
VCE=10V f=1MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
30
300
Transition frequency fT (MHz)
3 10 30 100
30
10
100 TC=100C 30 25C 10 -25C
10
3 TC=-25C 1 25C
3
100C
1
0.3
3
0.3
0.1 0.1
0.3
1
3
10
30
100
1 0.1
0.3
1
0.1 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob VCB
10000 100 IE=0 f=1MHz TC=25C 30
ton, tstg, tf IC
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=200V TC=25C tstg 1 ton 0.3 0.1 0.03 tf
Area of safe operation (ASO)
100 30 ICP IC Non repetitive pulse TC=25C
t=0.5ms 1ms 10ms
Collector output capacitance Cob (pF)
Switching time ton,tstg,tf (s)
3000
10 3
Collector current IC (A)
10 3 1 0.3 0.1 0.03 0.01
1000
DC
300
100
30
10 1 3 10 30 100
0.01 0 2 4 6 8 10 12 14 16
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Area of safe operation, reverse bias ASO
16 14 Lcoil=30H IC/IB=5 (IB1=-IB2) TC100C IC
2SC3975
Reverse bias ASO measuring circuit
L coil IB1 Vin T.U.T IC
Collector current IC (A)
12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 800
-IB2
VCC
tW
Vclamp
Collector to emitter voltage VCE (V)
Rth(t) t
10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink
Thermal resistance Rth(t) (C/W)
1000
100 (1)
10
(2)
1
0.1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR


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